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Specificat

Parametrics

IPB60R099CP

Budgetary Price €/1k

3.13

D (@25°C) max

31.0 A

ID max

31.0 A

IDpuls max

93.0 A

Mounting

SMT

Ptot max

255.0 W

Package

D2PAK (TO-263)

Polarity

N

QG (typ @10V)

60.0 nC

QG

60.0 nC

DS (on) (@10V) max

99.0 mΩ

RDS (on) max

99.0 mΩ

Rth

0.5 K/W

RthJC max

0.5 K/W

VDS max

600.0 V

VGS(th) min max

2.5 V 3.5 V

 Topology

Product Group

Voltage Class nominal

ID @25°C max

QG typ @10V nominal

RDS (on) @10V max

Budgetary Price €/1k nominal

Mounting

Qualification

Language

Product Category

Package

Program Memory (macro) nominal

Data Memory (macro) nominal

Polarity N OR N+N(macro)

Voltage Class (Macro)

Type (macro)

Polarity P+N(macro)

Technology Silicon-PN (macro)

Technology Silicon-Schottky (macro)

Technology Silicon-Carbide-Schottky (macro)

Technology Any (macro)

Polarity N Depletion(macro)

Polarity P(macro)

6R099 IPI60R099CP MOSFET 600V 31A(Tc) 3.5V @ 1.2mA 99mΩ @ 18A,10V 255W(Tc) TO-26

SKU: IPI60R099CP
$9.99Price